A Comparative Analysis of FinFET Based SRAM Design

FinFETs are widely used as efficient alternatives to the single gate general transistor in technology scaling because of their narrow channel characteristic. The width quantization FinFET devices helps reduce design flexibility Static Random Access Memory (SRAM) and tackles divergence between stable, write read operations. SRAM is many medical applications due its low power consumption but traditional 6T has short effect problems. Recently, overcome these problems various 7T, 9T, 12T, 14T architectures designed using FinFET. This article provides a comprehensive survey designs It offers comparative analysis technology, consumption, propagation delay, delay product, margin. Additionally, presents simulation 5T CMOS for 14 nm Microwind 3.8 tool. outcomes proposed compared with several recent based on power, and, stability parameters such read, hold noise Finally, discusses challenges future direction optimization accuracy, area, speed, cost FinFET-based SRAMs.